[object Object]
1
$68.6896
$68.6896
30
$60.3568
$1,810.7040
120
$56.2016
$6,744.1920
TYPE | DESCRIPTION |
Mfr | Toshiba Electronic Devices and Storage Corporation |
Series | - |
Package | Tube |
Product Status | ACTIVE |
Package / Case | TO-247-4 |
Mounting Type | Through Hole |
Operating Temperature | 175°C |
Technology | SiC (Silicon Carbide Junction Transistor) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Rds On (Max) @ Id, Vgs | 21mOhm @ 50A, 18V |
Power Dissipation (Max) | 431W (Tc) |
Vgs(th) (Max) @ Id | 5V @ 11.7mA |
Supplier Device Package | TO-247-4L(X) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Vgs (Max) | +25V, -10V |
Drain to Source Voltage (Vdss) | 1200 V |
Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 800 V |