[object Object]
  • image of Single FETs, MOSFETs>TW015Z120C,S1F
  • image of Single FETs, MOSFETs>TW015Z120C,S1F
  • image of Single FETs, MOSFETs>TW015Z120C,S1F
  • image of Single FETs, MOSFETs>TW015Z120C,S1F
TW015Z120C,S1F
G3 1200V SIC-MOSFET TO-247-4L 1
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Tube
30
:
:

1

$68.6896

$68.6896

30

$60.3568

$1,810.7040

120

$56.2016

$6,744.1920

image of Single FETs, MOSFETs>TW015Z120C,S1F
image of Single FETs, MOSFETs>TW015Z120C,S1F
image of Single FETs, MOSFETs>TW015Z120C,S1F
TW015Z120C,S1F
TW015Z120C,S1F
Single FETs, MOSFETs
Toshiba Electronic Devices and Storage Corporation
G3 1200V SIC-MOSFET TO-247-4L 1
-
Tube
98
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature175°C
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 50A, 18V
Power Dissipation (Max)431W (Tc)
Vgs(th) (Max) @ Id5V @ 11.7mA
Supplier Device PackageTO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 800 V
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086-18054219561
0
[object Object]