[object Object]
  • image of Single Diodes>TRS12V65H,LQ
  • image of Single Diodes>TRS12V65H,LQ
TRS12V65H,LQ
G3 SIC-SBD 650V 12A DFN8X8
-
Tape & Reel (TR)
2500
:
:

1

$3.6736

$3.6736

10

$3.0800

$30.8000

100

$2.4976

$249.7600

500

$2.2176

$1,108.8000

1000

$1.9040

$1,904.0000

2500

$1.7920

$4,480.0000

5000

$1.7136

$8,568.0000

image of Single Diodes>TRS12V65H,LQ
image of Single Diodes>TRS12V65H,LQ
TRS12V65H,LQ
TRS12V65H,LQ
Single Diodes
Toshiba Electronic Devices and Storage Corporation
G3 SIC-SBD 650V 12A DFN8X8
-
Tape & Reel (TR)
4962
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case4-VSFN Exposed Pad
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F778pF @ 1V, 1MHz
Current - Average Rectified (Io)12A
Supplier Device Package4-DFN-EP (8x8)
Operating Temperature - Junction175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 12 A
Current - Reverse Leakage @ Vr120 µA @ 650 V
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086-18054219561
0
[object Object]