[object Object]
  • image of Bipolar Transistor Arrays, Pre-Biased>RN4985FE,LXHF(CT
  • image of Bipolar Transistor Arrays, Pre-Biased>RN4985FE,LXHF(CT
RN4985FE,LXHF(CT
AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K
-
Tape & Reel (TR)
4000
:
:

1

$0.4144

$0.4144

10

$0.2912

$2.9120

100

$0.1456

$14.5600

500

$0.1344

$67.2000

1000

$0.1008

$100.8000

2000

$0.0896

$179.2000

4000

$0.0896

$358.4000

8000

$0.0896

$716.8000

12000

$0.0784

$940.8000

28000

$0.0784

$2,195.2000

100000

$0.0672

$6,720.0000

image of Bipolar Transistor Arrays, Pre-Biased>RN4985FE,LXHF(CT
image of Bipolar Transistor Arrays, Pre-Biased>RN4985FE,LXHF(CT
RN4985FE,LXHF(CT
RN4985FE,LXHF(CT
Bipolar Transistor Arrays, Pre-Biased
Toshiba Electronic Devices and Storage Corporation
AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K
-
Tape & Reel (TR)
7970
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max100mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition250MHz, 200MHz
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageES6
GradeAutomotive
QualificationAEC-Q101
captcha

086-18054219561
0
[object Object]