• image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
  • image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
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NXH003P120M3F2PTNG
SILICON CARBIDE (SIC) MODULE EL
-
Tray
20
:
:

1

$289.7664

$289.7664

20

$271.3984

$5,427.9680

40

$261.1952

$10,447.8080

image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
NXH003P120M3F2PTNG
NXH003P120M3F2PTNG
FET, MOSFET Arrays
Sanyo Semiconductor/onsemi
SILICON CARBIDE (SIC) MODULE EL
-
Tray
20
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max1.48kW (Tj)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds20889pF @ 800V
Rds On (Max) @ Id, Vgs5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs1200nC @ 20V
Vgs(th) (Max) @ Id4.4V @ 160mA
Supplier Device Package36-PIM (56.7x62.8)
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086-18054219561
0
[object Object]