[object Object]
  • image of Single FETs, MOSFETs>CGD65B130S2-T13
  • image of Single FETs, MOSFETs>CGD65B130S2-T13
CGD65B130S2-T13
650V GAN HEMT, 130MOHM, DFN5X6.
-
Tape & Reel (TR)
5000
:
:

1

$7.1904

$7.1904

10

$6.0368

$60.3680

100

$4.8832

$488.3200

500

$4.3456

$2,172.8000

1000

$3.7184

$3,718.4000

2000

$3.5056

$7,011.2000

5000

$3.3600

$16,800.0000

image of Single FETs, MOSFETs>CGD65B130S2-T13
image of Single FETs, MOSFETs>CGD65B130S2-T13
CGD65B130S2-T13
CGD65B130S2-T13
Single FETs, MOSFETs
Cambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN5X6.
-
Tape & Reel (TR)
4885
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V
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086-18054219561
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[object Object]