156
2.16
336.96
| TYPE | DESCRIPTION |
| Mfr | International Rectifier |
| Series | HEXFET® |
| Package | Bulk |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc), 303A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA, 2.1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V, 53nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1735pF @ 13V, 4765pF @ 13V |
| Power - Max | 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 32-PowerVFQFN |
| Supplier Device Package | 32-PQFN (6x6) |
| Base Product Number | IRFHE4250 |
