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| TYPE | DESCRIPTION |
| Mfr | International Rectifier |
| Series | HEXFET® |
| Package | Bulk |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1321pF @ 13V |
| Power - Max | 25W, 28W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | Dual PQFN (5x4) |
| Base Product Number | IRFH4257 |
