310
1.09
337.9
| TYPE | DESCRIPTION |
| Mfr | International Rectifier |
| Series | Automotive, AEC-Q101, HEXFET® |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 76A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3171 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3-901 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
