523
0.64
334.72
| TYPE | DESCRIPTION |
| Mfr | International Rectifier |
| Series | HEXFET® |
| Package | Bulk |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | AUIRF9952 |
